すべて
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Reverse conducting diode thyristor -
Bidirectional diode thyristor; Diac -
Triode thyristor -
Reverse blocking triode thyristor, N-gate (anode-side controlled) -
Reverse blocking triode thyristor, P-gate (cathode-side controlled) -
Turn-off thyristor -
Turn-off triode thyristor, N-gate (anode-side) -
Turn-off triode thyristor, P-gate (cathode-side controlled) -
Reverse blocking thyristor, tetrode type -
Bidirectional triode thyristor; Triac -
Reverse conducting triode thyristor -
Reverse conducting triode thyristor, N-gate (anode-side controlled) -
Reverse conducting triode thyristor, P-gate (cathode-side controlled) -
PNP transistor -
NPN transistor with collector connected to the envelope -
NPN transistor -
NPN avalanche transistor -
Unijunction transistor with P-type base -
Unijunction transistor with N-type base -
NPN transistor with transverse biased base -
PNIP transistor with connection to the intrinsic region -
PNIN transistor with connection to the intrinsic region -
Junction field effect transistor with N-type channel -
Junction field effect transistor with P-type channel -
IGFET enhancement type, single gate, P-type channel without substrate connection -
IGFET enhancement type, single gate, N-type channel without substrate connection -
IGFET enhancement type, single gate, P-type channel with substrate connection brought out -
IGFET enhancement type, single gate, N-type channel with substrate internally connected to source -
IGFET, depletion type, single gate, N-type channel without substrate connection -
IGFET, depletion type, single gate, P-type channel without substrate connection